Mondadori Store

Trova Mondadori Store

Benvenuto
Accedi o registrati

lista preferiti

Per utilizzare la funzione prodotti desiderati devi accedere o registrarti

Vai al carrello
 prodotti nel carrello

Totale  articoli

0,00 € IVA Inclusa

Electromigration Modeling at Circuit Layout Level - Feifei He - Cher Ming Tan
Electromigration Modeling at Circuit Layout Level - Feifei He - Cher Ming Tan

Electromigration Modeling at Circuit Layout Level

Feifei He - Cher Ming Tan
pubblicato da Springer Nature Singapore

Prezzo online:
46,79
51,99
-10 %
51,99

Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

0 recensioni dei lettori  media voto 0  su  5

Scrivi una recensione per "Electromigration Modeling at Circuit Layout Level"

Electromigration Modeling at Circuit Layout Level
 

Accedi o Registrati  per aggiungere una recensione

usa questo box per dare una valutazione all'articolo: leggi le linee guida
torna su Torna in cima