Mondadori Store

Trova Mondadori Store

Benvenuto
Accedi o registrati

lista preferiti

Per utilizzare la funzione prodotti desiderati devi accedere o registrarti

Vai al carrello
 prodotti nel carrello

Totale  articoli

0,00 € IVA Inclusa

High-k Materials in Multi-Gate FET Devices


pubblicato da CRC Press

Prezzo online:
88,75

High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level.

  • Provides basic knowledge about FET devices
  • Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies
  • Discusses fabrication and characterization of high-k materials
  • Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures
  • Offers detailed application of high-k materials for advanced FET devices
  • Considers future research directions

This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

0 recensioni dei lettori  media voto 0  su  5

Scrivi una recensione per "High-k Materials in Multi-Gate FET Devices"

High-k Materials in Multi-Gate FET Devices
 

Accedi o Registrati  per aggiungere una recensione

usa questo box per dare una valutazione all'articolo: leggi le linee guida
torna su Torna in cima