Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.
This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.
This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Contents:
Dedication
About the Author
Preface
Introduction
Material Properties and Processing
Breakdown Voltage
Ideal Specific On-Resistance
Schottky Rectifiers
Shielded Schottky Rectifiers
P-i-N Rectifiers
MPS Rectifiers
Junction Field Effect Transistors
The Baliga-Pair (Cascode) Configuration
Planar-Gate Power MOSFETs
Trench-Gate Power MOSFETs
Power JBSFETs
Super-Junction MOSFETs
Short Circuit Capability and BaSIC Topology
Bi-Directional Switch
Insulated Gate Bipolar Transistors
SiC Power Device Manufacturing
Synopsis
Homework Problems
Index
Readership: Researchers, professionals, academics, advanced undergraduate and graduate students in electrical & electronic engineering, circuits and systems, semiconductors and energy studies.