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A. A. Allerman
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A. M. Armstrong
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Albert Baca
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Alexander Y. Polyakov
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Aman Haque
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B. A. Klein
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Bianchi Mendez
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Chaker Fares
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Chang-Run Wu
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Debarati Mukherjee
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Dong Hang
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E. A. Douglas
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E.B. Yakimov
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Elaheh Ahmadi
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Emilio Nogales Díaz
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Erin Patrick
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Filipe J. Oliveira
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Guangwei Xu
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Hadis Morkoc
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Holger von Wenckstern
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Houqiang Fu
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Hx Jiang
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Indraneel Sanyal
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Janghyuk Kim
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Jen-Inn Chyi
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Jennifer Hite
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Jihyun Kim
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Jing. Li
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Jingyu Y. Lin
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Jinho Bae
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Kai Ding
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Kai Fu
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Kwang Hyeon Baik
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Luiz Pereira
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Madeline Esposito
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Mahitosh Biswas
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Manuel Alonso-Orts
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Marius Grundmann
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Mark E. Law
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Max Kneiß
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Miguel Neto
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Ming Liu
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Natalia Izyumskaya
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Nicholas Glavin
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Patrick Carey
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Philip X.-L. Feng
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Qingwen W. Wang
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Rui F. Silva
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Shibing Long
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Shlomo Rotter
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Soohwan Jang
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Suhyun Kim
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Vitaliy Avrutin
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Weibing Hao
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Wenhao Xiong
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Xu-Qian Zheng
pubblicato da
Institute of Physics Publishing
Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications.
This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems.
The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.
Key Features
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